Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1546890 | Physica E: Low-dimensional Systems and Nanostructures | 2008 | 5 Pages |
Abstract
Mn-including InAs quantum dots (QDs) were fabricated by Mn-ion implantation and subsequent annealing. The optical, compositional, and structural properties of the treated samples were analyzed by photoluminescence (PL) and microscopy. Energy dispersive X-ray (EDX) results indicate that Mn ions diffused from the bulk GaAs into the InAs QDs during annealing, and the diffusion appears to be driven by the strain in the InAs QDs. The temperature dependence of the PL of Mn-including InAs QD samples exhibits QDs PL characteristics. At the same time, the heavy Mn-including InAs QD samples have ferromagnetic properties and high Tc.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
L.J. Hu, Y.H. Chen, X.L. Ye, Y.H. Jiao, L.W. Shi, Z.G. Wang,