| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546964 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 5 Pages |
Abstract
Intensity correlation measurements on single InP/GaInP quantum dots (QDs) show antibunching at zero delay time, indicative of single photon emission. The antibunching time τR increases or decreases with temperature depending on the QD size as a result of the competition between: (1) thermal excitation of holes dominant in smaller QDs and (2) dark-to-bright exciton transition dominant in larger QDs. The antibunching minimum g(2)(0) remains below 0.2 up to 45 K.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A.K. Nowak, E. Gallardo, D. Sarkar, D. Sanvitto, H.P. van der Meulen, J.M. Calleja, J.M. Ripalda, L. González, Y. González,