| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546973 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
The modulation spectroscopy on 1.45 μm metamorphic InAs quantum dots (QDs) with In0.3Ga0.7As capping layer grown on GaAs substrate by molecular beam epitaxy (MBE) has been investigated by differential absorption (Îα), electro-reflectance (ER), and photo-reflectance (PR) spectra at different reverse bias. The optical transitions of the ground state, excited states, and wetting layers were identified and discussed. The micro-structure characterization was also analyzed by TEM and AFM. The variation of refractive index spectra (În) by calculating Îα spectra through Kramers-Kronig transform is obtained to study the electro-absorption behaviors. Additionally, a simple physical model is proposed to explain the experimental values between the În and ÎR spectra performed by two different modulation spectroscopies (Îα and ER). The built-in electric field of metamorphic InAs QDs structure was determined to analyze the Franz-Keldysh Oscillation (FKO) extreme in PR spectra with different bias.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
E.Y. Lin, C.Y. Chen, T.E. Tzeng, S.L. Chen, David J.Y. Feng, T.S. Lay,