Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1546981 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
InGaN/GaN QW laser structure was investigated on a GaN trapezoid grown on (1 1 1)Si substrate by selective MOVPE. The dislocation density in the active layer was reduced by a two-step growth method adopting facet controlled epitaxial lateral overgrowth (FACELO). A sample with 350 μm long cavity length showed narrowing of the spectral peak under optical excitation. The compositional non-uniformity originating from the ridge growth on the trapezoid is removed by adopting re-evaporation phenomenon under heat treatment during the growth process.
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Authors
B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki,