| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546992 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
Tunable inertial-ballistic rectification is studied in a nanoscale injection-type Si/SiGe rectifier in the hot-electron regime. The rectifier consists of a cascade of two nanoscale cross junctions in series. Two pairs of opposing current injectors merge under 30∘30∘ into a straight central voltage stem. The electron densities in the injectors and the stem can be adjusted separately by two local top-gates. The measurements reveal a substantial efficiency increase for a nearly depleted stem. The efficiency of ballistic rectifiers can be expressed by the transfer resistance RT (output voltage divided by input current), the best value we achieve is 800Ω.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
D. Salloch, U. Wieser, U. Kunze, T. Hackbarth,