| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546996 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
Molecular beam epitaxial growth and photoluminescence (PL) properties of SnTe/PbTe/CdTe double quantum wells (DQWs) on (1 0 0)-oriented GaAs substrates are reported. These DQWs were consisted of a very thin SnTe/PbTe QW nested in a 10-nm-thick PbTe/CdTe QW. Efficient midinfrared PL was observed from the DQWs at 300 K in agreement with the coherent SnTe/PbTe growth on the thick CdTe barrier layer. The PL peak wavelength of the DQWs was found to increase with the SnTe thickness d by covering a wide range of the 3–5 μm atmospheric window with d≤2.5 monolayer.
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Authors
Kazuto Koike, Ryou Kawaguchi, Mitsuaki Yano,