Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547003 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
The carrier density dependence of the refractive index of Si-doped InGaAs/AlAsSb coupled double quantum wells (CDQWs) was studied. The refractive index of the CDQWs changed due to two effects that arose from: (1) a change in the optical absorption and (2) the carrier plasma effect. The refractive index changes due to these two effects were separately evaluated by experimental methods and found to agree well with reference values obtained by a prism coupling technique. By considering the carrier density dependence of the refractive index of the CDQWs and the fundamental requirements for practical devices, we found that the carrier density of the CDQWs should be low with sufficient optical absorption strength due to intersubband transitions
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Shin-ichiro Gozu, Teruo Mozume, Hiroshi Ishikawa,