| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547007 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 5 Pages |
Abstract
We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanation for the observed spin-valve like behavior during a magnetic field sweep by means of the magnetization configurations in the device. Furthermore, we prove that Coulomb blockade plays a decisive role for the transport mechanism and show that modeling the constriction as a granular metal describes the temperature and bias dependence of the conductance correctly and allows to estimate the number of participating islands located in the constriction.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Markus Schlapps, Stefan Geissler, Teresa Lermer, Janusz Sadowski, Werner Wegscheider, Dieter Weiss,