| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547071 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 6 Pages |
Abstract
We investigate the time-dependent transport properties of the quantum well (QW) with a wide band-gap material layer, where Al atoms doped in the middle GaAs QW. We find that the raised potential well bottom can affect the position of current hysteresis, current oscillation frequency and final steady-state mean current value. Moreover in this special structure, we find a negative differential conductance and only a current hysteresis region, the plateau structure of I-V curve found in the AlGaAs/GaAs/AlGaAs QW disappears.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zhenhong Dai, Jun Ni,