Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547082 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
The impurity states in a narrow-gap semiconductor parabolic quantum dot in the presence of external extremely strong magnetic field are considered in adiabatic approximation framework. Moreover, the dispersion law for impurity electron is described by using the Kane's two-band approximation. The effective one-dimensional equation describing the impurity electron's state along the field is obtained. The analytical expressions for total and binding energies of impurity ground state are obtained. The dependences of total and binding energies of impurity on the value of magnetic field and on the size of quantum dot are investigated.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
E.M. Kazaryan, A.V. Meliksetyan, L.S. Petrosyan, H.A. Sarkisyan,