Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547109 | Physica E: Low-dimensional Systems and Nanostructures | 2008 | 5 Pages |
Abstract
We present a study of carbon nanotube field effect transistors (CNTFET) operation and performance using Monte Carlo simulation including phonon scattering. In CNTFETs, operating in the quantum capacitance regime, the low driving electric field in the channel yields a high fraction of ballistic transport. In terms of ballisticity, ION/IOFF ratio and intrinsic delay, the performance of 100Â nm-long CNTFET is shown to be as high as that of much smaller Si transistors.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
H. Cazin d'Honincthun, H.-Nha Nguyen, S. Galdin-Retailleau, A. Bournel, P. Dollfus, J.P. Bourgoin,