Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547256 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 5 Pages |
Abstract
By combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (1 0 0) substrate by solid source molecular beam epitaxy. Four [011¯] stripe-patterned substrates different in pitch, depth, and sidewall angle, respectively, are used in this work. The surface morphology obtained by atomic force microscopy shows that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate. The mechanism determining the nucleation position of the InAs dots is discussed. The optical properties of the InAs dots on the patterned substrates are also investigated by photoluminescence.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
C.X. Cui, Y.H. Chen, P. Jin, B. Xu, Y.Y. Ren, C. Zhao, Z.G. Wang,