| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547263 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 5 Pages |
Abstract
The coherent tunnel magnetoresistance is studied in a double junction system using spin-dependent Anderson model. It is found that in contrast to the sequential tunneling description, the tunnel magneto resistance (TMR) significantly decreases in coherent tunneling regime. Remarkably, it is showed that the I-V characteristics and TMR are not sensitive to the intradot spin-flip transition.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Ping Zhang,