| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547267 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
A 3D model of semiconductor quantum dot based on the single subband approach with energy dependence of the electron effective mass is applied to calculate the single-electron spectra of InAs/GaAs quantum dots. The results are in good agreement with the capacitance–voltage measurements by Miller et al. [Phys. Rev. B 56 (1997) 6764]. Non-parabolic contributions to the electron effective mass and the energy of states are evaluated.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
I. Filikhin, E. Deyneka, B. Vlahovic,