| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547293 | Physica E: Low-dimensional Systems and Nanostructures | 2007 | 5 Pages |
Abstract
In this study, we have calculated the oscillator strengths for intersubband electronic transitions associated with an on-center impurity in a spherical quantum dot. Numerical calculations have been performed for both infinite confinement case and for different finite confining potential values in a spherical CdS/SiO2 quantum dot. Also, for comparison purpose, oscillator strengths for a spherical ZnS/SiO2 quantum dot with an infinite confinement potential are evaluated.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S. Yilmaz, H. Åafak,