| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547295 | Physica E: Low-dimensional Systems and Nanostructures | 2007 | 6 Pages |
Abstract
A complete three-dimensional (3D) numerical model of an InP MISFET has been presented for the application in the future ULSI circuits. The exact potential profile in the channel of 100Â nm N type InP MISFET has been computed by solving 3D Poisson's equation using boundary value problems. The electric field profile and mobility of the carriers have been studied extensively. The transfer characteristics of the MISFET has been studied numerically and presented in this paper. The drain current is calculated by applying electric field and the effective mobility of the carrier at a particular point. A study of other device parameters like transconductance, drain current vs. drain voltage of the device has been carried out and compared with the existing results. The model is purely a physics based one and overcomes the major limitations of the existing 2D/3D analytical models by providing a more accurate result and this model is validated by comparing with the existing results as well as the experimental results.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
K. Gowri, P. Rajesh, V. Rajamani,