| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547387 | Physica E: Low-dimensional Systems and Nanostructures | 2008 | 4 Pages |
Abstract
We examine the variation of the amplitude of Shubnikov-de Haas (SdH) oscillations under the influence of photoexcitation in the regime of the radiation-induced zero-resistance states in GaAs/AlGaAs devices. We find that the SdH amplitude scales linearly with the average background resistance in the vicinity of the radiation-induced resistance minima. The results show that the SdH amplitude vanishes in proportion to the background resistance at the centers of the zero-resistance states.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
R.G. Mani,