| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547442 | Physica E: Low-dimensional Systems and Nanostructures | 2009 | 4 Pages |
Abstract
This work aims at optical isolation of a few silicon nanocrystals (Si-NCs) embedded in silica. We rely on realization of a SiO single layer followed by annealing under vacuum to generate Si-NCs. We first report on optimization of luminescence of single Si-NC layer in SiO2 thin film. An optimum of photoluminescence signal was found for annealing at 1050 °C for 95 min. Then, in order to optically isolate single Si-NCs, lithographic processes such as creation of aluminum masks have been employed. We discuss the challenges and the chances of measuring a photoluminescence signal from few Si-NCs.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. Grün, P. Miska, E. Neu, D. Steinmetz, F. Montaigne, H. Rinnert, C. Becher, M. Vergnat,