Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547457 | Physica E: Low-dimensional Systems and Nanostructures | 2009 | 4 Pages |
Abstract
Highly oriented layer-structured erbium monosilicate (Er2SiO5) films have been formed by the pulsed laser deposition technique. Er and Si are alternately deposited in a oxygen atmosphere on Si substrates by computer-controlled deposition so that the ratio of Er and Si becomes 2:1 and one cycle of Er-Si-O layer becomes about 0.86 nm thickness which is the period of highly oriented crystalline Er2SiO5 films obtained in our laboratory. Crystalline Er2SiO5 films up to about 100 nm thickness with a high orientation were successfully formed after deposition of 100 stacks of Er-Si-O layers and post-deposition annealing above â¼1100 °C. The achievement of fabricating these thick and highly oriented crystalline Er2SiO5 films is due to the controlled Er, Si and O ratio and a quasi-layered structure of the as-deposited films in which self-organization can be attained by short migrations of each element during the high-temperature annealing.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Tadamasa Kimura, Yasuhito Tanaka, Hiroshi Ueda, Hideo Isshiki,