Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547460 | Physica E: Low-dimensional Systems and Nanostructures | 2009 | 6 Pages |
Abstract
We have studied three types of these detectors; normal incident illuminated p-i-n detectors (NI-PD), waveguide p-i-n detectors (WG-PD), and avalanche photodetectors (APDs) operating over a wavelength range of 850-1550Â nm. NI-PDs have achieved â14.5Â dBm sensitivity at 10Â Gb/s and 850Â nm, which is comparable to similarly commercially packaged GaAs devices. Unlike GaAs detectors, however, the Ge detectors scale well out to 1310Â nm, because Ge has a much smaller bandgap. WG-PDs have achieved bandwidths of approximately 30Â GHz at 1550Â nm with internal quantum efficiencies of 90%, and similar, or better, performance is also expected at 1310Â nm. Normal incident APDs operating at 1310Â nm have achieved a primary responsivity of 0.54Â A/W with a 3-dB bandwidth of 9Â GHz at a gain of 17. A gain-bandwidth product of 153Â GHz has been measured which generally exceeds that of a commercial InP-based APD.
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Materials Science
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Authors
M. Morse, O. Dosunmu, T. Yin, Y. Kang, H.D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, M. Zadka,