Article ID Journal Published Year Pages File Type
1547462 Physica E: Low-dimensional Systems and Nanostructures 2009 4 Pages PDF
Abstract

We investigate the temperature dependence of p–i–n photodetectors realized in germanium on silicon. The dark current increases by a factor 1.6–1.9 every 10 °C and is typically dominated by generation in the space charge region, with diffusion contributing in the best samples. The near infrared (NIR) responsivity decreases with temperature in devices with a large defect-density, but is more stable in high-quality photodiodes. These findings provide a relevant insight on the design of Ge-on-Si NIR detectors to be operated above room temperature.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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