| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547465 | Physica E: Low-dimensional Systems and Nanostructures | 2009 | 5 Pages |
Abstract
In this paper a novel photodetector at 1550 nm, working at room temperature and completely silicon compatible, is reported. The detector is a resonant cavity-enhanced structure incorporating a Schottky diode back-illuminated and its working principle is based on the internal photoemission effect. The device performances in terms of responsivity are numerically calculated for different values of bottom reflectivity. Finally, a preliminary device was realized and characterized in order to validate the theoretical results.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. Casalino, L. Sirleto, L. Moretti, M. Gioffrè, G. Coppola, M. Iodice, I. Rendina,