Wafer-scale transfer of nanoimprinted patterns into silicon substrates

A simple low cost method of nanoimprinting has been developed. The technique uses a flexible disposable master and lends itself to roll-to-roll processing. Residual layer thicknesses of 5-10 nm are routinely achieved. This enables the critical step of pattern transfer into hard substrates by reactive ion etching, an essential step in the fabrication of sub-wavelength photonic device elements on a wafer-scale.