| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547491 | Physica E: Low-dimensional Systems and Nanostructures | 2007 | 5 Pages |
Abstract
Zinc oxide (ZnO) thin films on Si (1 1 1) substrates were deposited by pulsed laser ablation of ZnO target at different oxygen pressures. A pulsed Nd:YAG laser with wavelength of 1064 nm was used as laser source. The deposited thin films have been characterized by X-ray diffraction (XRD), Atomic force microscopy (AFM), and Raman spectroscopy. XRD measurements indicate that the ZnO thin films deposited at the oxygen pressure of 1.3 Pa have the best crystalline quality. AFM results show that the surface roughness of ZnO film increases with the increase of oxygen pressure. The Raman results indicate that oxygen ambient plays an important role in removing defects due to excess zinc.
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Authors
Z.G. Zhang, F. Zhou, X.Q. Wei, M. Liu, G. Sun, C.S. Chen, C.S. Xue, H.Z. Zhuang, B.Y. Man,