Article ID Journal Published Year Pages File Type
1547513 Physica E: Low-dimensional Systems and Nanostructures 2006 4 Pages PDF
Abstract

We describe a phenomenological model for the conductance feature near 0.7×2e2/h0.7×2e2/h that occurs in quantum point contacts. We focus on the transconductance at finite source–drain bias and contrast our model with the results expected from a single-particle picture. Good agreement is seen in comparing the model with experimental data, taken on ultra-low-disorder GaAs induced electron systems. Although simple, our phenomenology suggests important boundary conditions for an underlying microscopic theory.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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