Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547513 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
We describe a phenomenological model for the conductance feature near 0.7×2e2/h0.7×2e2/h that occurs in quantum point contacts. We focus on the transconductance at finite source–drain bias and contrast our model with the results expected from a single-particle picture. Good agreement is seen in comparing the model with experimental data, taken on ultra-low-disorder GaAs induced electron systems. Although simple, our phenomenology suggests important boundary conditions for an underlying microscopic theory.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
D.J. Reilly, Y. Zhang, L. DiCarlo,