Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547535 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
Transport measurements have been carried out on a 10Â nm n-type PbTe/Pb0.9Eu0.1Te quantum well at millikelvin temperatures. The Hall and longitudinal resistances are measured in a Van der Pauw geometry under high magnetic fields up to 23Â T. A robust signature of the integer quantum Hall effect is observed without any sign of parasitic parallel conduction. The unconventional sequence of filling factors associated with the integer quantum Hall effect is discussed in terms of the occupancy of multiple valleys.
Related Topics
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Materials Science
Electronic, Optical and Magnetic Materials
Authors
V.A. Chitta, W. Desrat, D.K. Maude, B.A. Piot, N.F. Jr., P.H.O. Rappl, A.Y. Ueta, E. Abramof,