| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547541 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
Transport measurements in high magnetic fields have been performed on two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear feature of quantum Hall effect was observed in spite of presence of QDs nearby 2DES. However, both magnetoresistance, Ïxx, and Hall resistance, Ïxy, are suppressed significantly only in the magnetic field range of filling factor in 2DES ν<1 and voltage applied on a front gate Vg>0V . The results indicate that the electron state in QDs induces spin-flip process in 2DES.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
K. Takehana, T. Takamasu, G. Kido, M. Henini, L. Eaves,