Article ID Journal Published Year Pages File Type
1547564 Physica E: Low-dimensional Systems and Nanostructures 2006 4 Pages PDF
Abstract
The dipole trap model can explain many features of the metallic behavior in gated high-mobility silicon-inversion layers. We have performed numerical calculations of the resistivity in order to drop several restrictions of former analytical considerations. The effect of a limited spatial extent and of energetical distribution broadening of trap states is discussed in this work.
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Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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Dipole trap model for the metal-insulator transition in gated silicon-inversion layers
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