| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547565 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
The compressibility Ï of dilute two-dimensional electron and hole gases in GaAs semiconductor structures has been studied in the ranges of the interaction parameter rs=1-2.5 and rs=10-30 for the electron and hole system, respectively. Nonmonotonic dependence of Ï-1 with an upturn at low carrier densities is observed. Despite the large difference in rs the behavior of Ï-1 in both systems can be accurately described by the theory of nonlinear screening of disorder by the carriers.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
E.A. Galaktionov, G.D. Allison, M.M. Fogler, A.K. Savchenko, S.S. Safonov, M.Y. Simmons, D.A. Ritchie,