| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547569 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov-de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
B. Lindner, G. Pillwein, G. Brunthaler, J. Ahopelto, M. Prunnila,