Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547570 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
We determined the spin susceptibility Ï and the effective mass m* towards the high density limit. Using a tunable GaAs/AlGaAs heterostructure, we can vary the 2D electron density from n=1Ã1010cm-2 to 4Ã1011cm-2. From â¼5Ã1010cm-2 to our highest densities the mass values fall â¼10% below the band mass of GaAs. The enhancement of Ï decreases monotonically from a factor of 3 to 0.88 with increasing density. It continues to follow a previously observed power law, which leads to an unphysical limit for nââ. Band structure effects affecting mass and g-factor become appreciable for large n and, when taken into account, lead to the correct limiting behavior of Ï. Numerical calculations are in qualitative agreement with our data but differ in detail.
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Authors
Y.-W. Tan, J. Zhu, H.L. Stormer, L.N. Pfeiffer, K.W. Baldwin, K.W. West,