Effect of temperature on the binding energy of excited states in a ridge quantum wire

In this paper, we study the influence of temperature on the binding energy of a hydrogenic donor impurity in a ridge quantum wire using a variational procedure within the effective mass approximation. We calculate the binding energy of the donor impurity in its ground state and first few excited states in a V-groove GaAs/Ga1-xAlxAsGaAs/Ga1-xAlxAs quantum wire for various impurity positions and different temperatures. We find that the temperature and impurity locations can have important effect in the binding energy of the donor impurity.