Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547670 | Physica E: Low-dimensional Systems and Nanostructures | 2007 | 4 Pages |
Abstract
We present a study on amorphous SiO/SiO2 superlattice performed by grazing-incidence small-angle X-ray scattering (GISAXS). Amorphous SiO/SiO2 superlattices were prepared by high-vacuum evaporation of 3 nm thin films of SiO and SiO2 (10 layers each) onto Si(1 0 0) substrate. After the deposition, samples were annealed at 1100 °C for 1 h in vacuum, yielding to Si nanocrystals formation. Using a Guinier approximation, the shape and the size of the crystals were obtained. The size of the growing nanoparticles in the direction perpendicular to the film surface is well controlled by the bilayer thickness. However, their size varies more significantly in the direction parallel to the film surface.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
I. Kovac˘ević, P. Dubc˘ek, S. Duguay, H. Zorc, N. Radić, B. Pivac, A. Slaoui, S. Bernstorff,