| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547676 | Physica E: Low-dimensional Systems and Nanostructures | 2007 | 4 Pages |
Abstract
Low-pressure chemical vapour deposited Si3N4/nc-Si/Si3N4 layers prepared on Si substrates were characterized by spectroscopic ellipsometry. Model Dielectric Function (MDF) was applied to obtain the thickness and the dielectric spectra of the middle nc-Si layer. Sensitive effect of the deposition time was obtained on the MDF parameters. A comparison is presented between the studied samples and reference materials.
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Authors
P. Basa, P. Petrik, M. Fried, L. Dobos, B. Pécz, L. Tóth,