Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547729 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
Mass Hg-doped GaN nanowires with an average diameter of about 25Â nm and lengths up to hundreds of micrometers are fabricated by chemical vapor reaction. The as-synthesized products have a single crystal phase and grow along the ã0Â 0Â 1ã direction. The growth of Hg-doped GaN nanowires is suggested for quasi vapor-solid mechanism (QVSM). In particular, for as large-scale GaN nanowires like films, a novel strong near ultraviolet PL spectrum appears with a doping Hg where the Hg-doped GaN nanowires are found to be responsible for the different characteristics; the PL mechanism is explained in detail.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Shao-Min Zhou,