| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547743 | Physica E: Low-dimensional Systems and Nanostructures | 2007 | 5 Pages |
Abstract
We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature-dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zhihong Chen, Yu-Ming Lin, Michael J. Rooks, Phaedon Avouris,