| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547772 | Physica E: Low-dimensional Systems and Nanostructures | 2007 | 4 Pages |
Abstract
The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiNx treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances as self-thermometers. The relation of Teâ¼I1.42 was obtained, which is in contrast to Teâ¼I0.5 in the resistivity peaks in a GaAs/AlGaAs 2DES. This may be caused by the scattering effect in this sample.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Li-Hung Lin, Kui-Ming Chen, Shiou-Shian Han, C.-T. Liang, Wen-Chang Hsueh, Kuang Yao Chen, Zhi-Hao Sun, P.H. Chang, N.C. Chen, Chin-An Chang,