Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547840 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 6 Pages |
Abstract
An analytical model for I–V characteristics of AlGaN/GaN based high electron mobility transistors (HEMTs) has been developed that is capable to predict accurately the effects of depletion layer thickness on negative deferential conductivity in positive gate biases. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schrödinger and Poisson equations and including the electron trap states effects. The calculated model results are in very good agreement with existing experimental data for Al0.2Ga0.8N/GaN HEMT device, especially in the liner regime.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
R. Yahyazadeh, A. Asgari, M. Kalafi,