Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547847 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
The binding energy of a shallow, hydrogenic on-centre impurity in a GaAs–AlxGa1−xAs quantum dot is calculated using the standard variational technique. The effect of band non-parabolicity is considered using the Luttinger–Kohn ‘effective mass’ equation. The electronic energy level and the donor binding energy are computed as a function of the dot size, both in the presence and in absence of the band non-parabolicity effect. Results indicate noticeable differences in two cases, especially for small dots.
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Authors
C. Bose, K. Midya, M.K. Bose,