Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547849 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 5 Pages |
Abstract
Hydrogenated microcrystalline silicon films were prepared by very high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) at 180 °C. The optical emission spectroscopy (OES) was used to monitor the plasma during the deposition process. When the pressure was enhanced from 50 to 80 Pa, the intensities of SiH*, Hα* and Hβ* increase at first and then decrease for the pressures higher than 80 Pa. The transition from microcrystalline to amorphous phase occurs when increasing the pressure at silane concentration of 5%. It was found that the intensity ratio of IHα*/ISiH* affects the growth of microcrystalline silicon. With the increase of IHα*/ISiH* the crystallnity of films was improved. There are no direct relations between the SiH* intensity and the deposition rate. The deposition rate and dark conductivity are also discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zhimeng Wu, Jian Sun, Qingsong Lei, Ying Zhao, Xinhua Geng, Jianping Xi,