Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547855 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
We have synthesized β-Ga2O3 nanobelts on the silicon substrates by microwave plasma chemical vapor deposition (MPCVD). The morphology and structure of β-Ga2O3 nanobelts characterized by scanning electron microscopy (SEM) were not influenced through the thermal annealing. The photoluminescence properties of β-Ga2O3 nanobelts measured under different excitation wavelength, annealing temperature and annealing time indicated that as-prepared and annealed nanobelts had a blue and an ultraviolet emission (under excitation wavelength of 250 nm at 316 and 432 nm, under excitation wavelength of 325 at 428 nm), but the relative peak intensities of ultraviolet and blue emission, respectively, increase and decrease by the thermal annealing.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Feng Zhu, ZhongXue Yang, WeiMin Zhou, YaFei Zhang,