| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547858 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 5 Pages |
Abstract
A correlation between resistivity-voltage dependences of the hydrogenated SiN/Si(1 1 1) films and phototransparency at λ=1.76μm was found. The contribution is both due to linear photoinduced effects as well as due to the two-photon absorption. It was revealed that with increasing of fundamental power density higher than 0.55GW/cm2 there occurs a drastic decrease of transparency. Maximal phototransparency changes are observed at about 7.5 ps and slightly increase with the increasing applied dc-electric field. Crucial role of interface trapping levels and electron-phonon interaction is shown.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
J. Ebothé, I.V. Kityk, K. Ozga, P. Mandracci, S. Tkaczyk, J. Swiatek,