| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547877 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.
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Authors
S.I. Jung, H.Y. Yeo, I. Yun, J.Y. Leem, I.K. Han, J.S. Kim, J.I. Lee,