Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547915 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
Conventional electron-beam lithographic patterning of GaAs substrates followed by reactive-ion etching of small holes has been successfully used to control the nucleation of InAs dots. We have observed >50%>50% single dot occupancy for holes ∼60nm wide and ∼35nm deep and show that the dot occupancy and dot size can be varied by changing the size of the holes. Luminescence from an array of these site-controlled dots has been demonstrated. Thus this use of substrate patterning is a viable technique to controllably place single dots at pre-determined positions in devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
P. Atkinson, M.B. Ward, S.P. Bremner, D. Anderson, T. Farrow, G.A.C. Jones, A.J. Shields, D.A. Ritchie,