| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547917 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
Novel, self-assembled quantum dot (QD) structures suitable for single-dot optical spectroscopy are fabricated by combining III–V molecular beam epitaxy and in situ, atomic layer precise etching. Several growth and etching steps are used to produce lateral InAs/GaAs QD bimolecules and unstrained GaAs/AlGaAs QDs with low surface density (≲108cm-2). Micro-photoluminescence is used to investigate the ensemble and single-QD properties of GaAs QDs. Single-QD spectra show resolution-limited sharp lines at low excitation and broad “shell-structures” at high excitation intensity.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A. Rastelli, S. Kiravittaya, L. Wang, C. Bauer, O.G. Schmidt,