Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547924 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
We study the effect of a high magnetic field (B) on the current-voltage characteristics, I(V), of a GaAs/(AlGa)As resonant tunneling diode incorporating a layer of ring-shaped quantum dots (QDs) in the quantum well (QW). The dots give rise to a series of four unusual resonances in I(V) which show a high degree of reproducibility across the epitaxial wafer. By combining data for B parallel and perpendicular to the growth axis z, we identify that the unusual resonances arise from resonant tunneling into QD excited states with 2pz-like symmetry. The two series of magneto-oscillations in I for Bâ¥z allow us to determine the resonant charging and discharging of the QW with varying bias.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
D. Walker, F. Pulizzi, A. Patanè, L. Eaves, D. Granados, J.M. Garcia, M. Henini, V.V. Rudenkov, P.C.M. Christianen, J.C. Maan, P. Offermans, P.M. Koenraad, G. Hill,