| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547929 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
We investigated the effect of GaNAs strain-compensating layers (SCLs) on the properties of InAs self-assembled quantum dots (QDs) grown on GaAs (0 0 1) substrates. The GaNAs material can be used as SCL thereby minimizing the net strain, and thus is advantageous for multi-stacking of InAs QDs structures and achieving long wavelength emission. The emission wavelength of InAs QDs can be tuned by changing the nitrogen (N) composition in GaNAs SCLs due to both effects of strain compensation and lowering of potential barrier height. A 1.3μm photoluminescence emission at 77 K was clearly observed for sample with GaN0.024As0.976 SCL. Further, we observed an improvement of optical properties of InAs QDs by replacing the more popular GaAs embedding layers with GaNAs SCLs, which is a result of decreasing non-radiative defects owing to minimizing the total net strain.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Ryuji Oshima, Takayuki Hashimoto, Hidemi Shigekawa, Yoshitaka Okada,