Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547930 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
InGaAsSb strain-reducing layers (SRLs) are applied to cover InAs quantum dots (QDs) grown on GaAs substrates. The compressive strain induced in InAs QDs from the GaAs is reduced due to the tensile strain induced by the InGaAsSb SRL, because the lattice constant of InGaAsSb is closer to InAs lattice constant than that of GaAs, resulting in a significant red shift of photoluminescence peaks of the InAs QDs. The emission wavelength from InAs QDs can be controlled by changing the Sb composition of the InGaAsSb SRL. The 1.5 μm band emissions were achieved in the sample with an InGaAsSb SRL whose Sb compositions were above 0.3. The calculation of the electron and the hole wave functions using the transfer matrix method indicates that the electron and the hole were localized around InAs QDs and InGaAsSb SRL.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Kouichi Akahane, Naokatsu Yamamoto, Shin-ichiro Gozu, Akio Ueta, Naoki Ohtani,