Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547932 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
We have found that the photoluminescence (PL) intensity of CdSe/ZnS nanocrystals placed on a thin film of insulator (GaAsOx/GaAs) depends on excitation wavelength through the interference effects of the excitation light. By employing the multi-reflection/interference calculation, the insulator thickness of the underlying non-uniform patterns can be evaluated by the simple observation of CdSe/ZnS PL with a couple of excitation wavelengths. Moreover, the differences observed for the temporal evolution of CdSe/ZnS PL (blue shifts and degradation) among the excitation wavelengths suggest that the photo-induced changes of chemical composition and surface ligands are responsible for blue shifts and degradation, respectively.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Kazunari Ozasa, Shigeyuki Nemoto, Mizuo Maeda, Masahiko Hara,