| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547953 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
We report direct observation of tunneling emission of electrons and holes from In(Ga)As/GaAs QDs in time resolved capacitance spectroscopy. From the dependence of the tunneling time constant on the external electric field the important entire localization energies of electron and holes in In(Ga)As QDs are determined with high accuracy. The results yield electron and hole localization energies of (260±20)meV and (210±20)meV, respectively, which is in excellent agreement with 8-band k·p theory.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. Geller, E. Stock, R.L. Sellin, D. Bimberg,